NDUL09N150C

NDUL09N150C Power MOSFET 1500V, 3.0Ω, 9A, N-Channel www.onsemi.com Features  Low On-Resistance  Ultra High Voltage  Pb-Free and RoHS Compliance  High Speed Switching  100% Avalanche Tested Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW  10s, duty cycle  1% Symbol VDSS VGSS ID IDL IDP Power Dissipation Junction Temperature Tc=25C PD Tj Storage Temperature Tstg Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3 mm from case for 10 seconds IS EAS TL Value 1500 ±30 9 6 18 3.0 78 150 55 to +150 6 197 260 Unit V V A A A W C C A mJ C Electrical Connection N-Channel Marking Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *2 Note : *1 VDD=50V, L=10mH, IAV=6A (Fig.1) *2 Insertion mounted Symbol RJC RJA Value 1.60 41.7 Unit C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February 2015 - Rev. 1 1 Publication Order Number : NDUL09N150C/D Electrical Characteristics at Ta  25C NDUL09N150C Parameter ...