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NTD6N40

ON Semiconductor

Power MOSFET

NTD6N40 Preferred Device Power MOSFET 6 Amps, 400 Volts N−Channel DPAK Designed for high voltage, high speed switching a...


ON Semiconductor

NTD6N40

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Description
NTD6N40 Preferred Device Power MOSFET 6 Amps, 400 Volts N−Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Industry Standard DPAK Surface Mount Package Typical Applications Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain − Continuous − Continuous @ 100°C − Single Pulse (tpv10 μs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C when mounted with the minimum recommended pad size VDSS VDGR VGS VGSM ID ID IDM PD 400 400 "20 "40 6.0 4.2 21 96 0.77 1.75 Vdc Vdc Vdc Adc Watts W/°C W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 6 A, L = 10 mH, RG = 25 Ω) EAS 180 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds RθJC RθJA RθJA TL °C/W 1.30 100 71.4 260 °C 1. When surface mounted to an FR4 board using the minimum recommended pa...




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