Power MOSFET
NTD6N40
Preferred Device
Power MOSFET 6 Amps, 400 Volts
N−Channel DPAK
Designed for high voltage, high speed switching a...
Description
NTD6N40
Preferred Device
Power MOSFET 6 Amps, 400 Volts
N−Channel DPAK
Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features
Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Industry Standard DPAK Surface Mount Package
Typical Applications
Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage
− Continuous − Non−Repetitive (tpv10 ms)
Drain − Continuous − Continuous @ 100°C − Single Pulse (tpv10 μs)
Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C when mounted with the minimum recommended pad size
VDSS VDGR
VGS VGSM
ID ID IDM PD
400 400
"20 "40 6.0 4.2 21 96 0.77 1.75
Vdc Vdc Vdc
Adc
Watts W/°C W/°C
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 6 A, L = 10 mH, RG = 25 Ω)
EAS 180 mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1.)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
RθJC RθJA RθJA
TL
°C/W 1.30 100 71.4
260 °C
1. When surface mounted to an FR4 board using the minimum recommended pa...
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