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6HP04CH Dataheets PDF



Part Number 6HP04CH
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channel Small Single MOSFET
Datasheet 6HP04CH Datasheet6HP04CH Datasheet (PDF)

Ordering number : ENA1039A 6HP04CH P-Channel Small Single MOSFET –60V, –370mA, 4.2Ω, Single CPH3 http://onsemi.com Features • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on cer.

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Ordering number : ENA1039A 6HP04CH P-Channel Small Single MOSFET –60V, –370mA, 4.2Ω, Single CPH3 http://onsemi.com Features • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --60 ±20 --370 --1480 0.6 150 --55 to +150 Unit V V mA mA W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--100μA VDS=--10V, ID=--190mA ID=--190mA, VGS=--10V ID=--100mA, VGS=--4V VDS=--20V, f=1MHz See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--370mA IS=--370mA, VGS=0V min --60 Ratings typ --1.2 310 3.1 5.1 24.1 8.5 4.1 18.4 15.2 113 41 0.84 0.19 0.21 --0.92 max --1 ±10 --2.6 4.2 7.3 --1.2 Unit V μA μA V mS Ω Ω pF pF pF ns ns ns ns nC nC nC V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2014 May, 2014 50714 TKIM TC-00003062/20608PE TIIM TC-00001164 No.A1039-1/5 6HP04CH Drain Current, ID -- mA ID -- VDS --400 --10.0V --6.0V --300 --4.5V --12.0V --4.0V --200 --100 0 0 14 12 10 VGS= --3V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain to Source Voltage, VDS -- V IT17336 RDS(on) -- VGS Ta=25°C --190mA 8 6 4 ID= --100mA 2 Drain Current, ID -- mA --400 VDS= --10V --350 ID -- VGS Ta=75°C --25°C 25°C --300 --250 --200 --150 --100 --50 0 0 --1 --2 --3 --4 --5 Gate to Source Voltage, VGS -- V IT17337 RDS(on) -- Ta 14 12 10 8 6 4 VGS= --4V, ID= VGS= --10V, I --100mA D= --190mA 2 Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Forward Transfer Admittance, |yfs | -- mS 0 0 1000 7 5 3 2 100 7 5 3 2 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Gate to Source Voltage, VGS -- V | yfs | -- ID IT17338 VDS= --10V Ta= --25°C 75°C 25°C 10 7 5 3 2 1 --1 23 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 td(off) tf td(on) tr 5 7 --10 2 3 5 7 --100 2 3 Drain Current, ID -- mA SW Time -- ID 5 7--1000 IT17340 VDD= --30V VGS= --10V 1 --0.1 23 5 7 --1 23 5 7 --10 Drain Current, ID -- A IT17342 Ciss, Coss, Crss -- pF Source Current, IS -- mA 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT17339 --1000 7 5 IS -- VSD VGS=0V 3 2 --100 7 5 3 2 --10 7 5 3 2 --1 0 100 7 5 Ta=75°C 25°C --25°C --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V IT17341 Ciss, Coss, Crss -- VDS f=1MHz 3 Ciss 2 10 Coss 7 5 Crss 3 2 1 0 --5 --10 --15 --20 --25 --30 Drain to Source Voltage, VDS -- V IT17343 No.A1039-2/5 Switching Time, SW Time -- ns Gate to Source Voltage, VGS -- V 6HP04CH --10 VDS= --30V --9 VGS -- Qg --8 --7 --6 --5 --4 --3 --2 --1 0 0 0.2 0.4 0.6 0.8 1.0 Total Gate Charge, Qg -- nC IT17344 PD -- Ta 0.8 When mounted on ceramic substrate (900mm2✕0.8mm) 0.7 0.6 0.5 0.4 Drain Current, ID -- A SOA --10 7 5 3 2 IDP= --1480mA (PW≤10μs) --1.0 7 5 ID= --370mA 3 2 --0.1 7 5 3 2 --0.01 Operation in this DC area op1e0r0am1ti0osmn1sm1s00μs is limited by RDS(on). 7 5 3 2 --0.001 --0.01 2 3 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 5 7--0.1 2 3 5 7 --1 2 3 5 7--10 2 3 5 7--100 Drain to Source Voltage, VDS -- V IT17345 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT17346 Allowable Power Dissipation, PD -- W No.A1039-3/5 Package Dimensions 6HP04CH-TL-W CPH3 CASE 318BA ISSUE O Unit : mm 1: Gate 2: Source 3: Drain 6HP04CH Land Pattern Example 0.6 1.4 2.4 0.95 0.95 Ordering & Package Information Device Package Shipping 6HP04CH-TL-W CPH3, SC-59 SOT-23, TO-236 3,000 pcs. / reel memo Pb-Free.


2SJ661 6HP04CH AS1138


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