Document
Ordering number : ENA1039A
6HP04CH
P-Channel Small Single MOSFET –60V, –370mA, 4.2Ω, Single CPH3
http://onsemi.com
Features
• 4V drive • Halogen free compliance • Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm)
Ratings --60 ±20
--370 --1480
0.6 150 --55 to +150
Unit V V mA mA W °C °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss
Coss
Crss
td(on) tr td(off) tf Qg
Qgs
Qgd
VSD
Conditions ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--100μA VDS=--10V, ID=--190mA ID=--190mA, VGS=--10V ID=--100mA, VGS=--4V
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--370mA
IS=--370mA, VGS=0V
min --60
Ratings typ
--1.2
310 3.1 5.1 24.1 8.5 4.1 18.4 15.2 113 41 0.84 0.19 0.21 --0.92
max --1
±10 --2.6
4.2 7.3
--1.2
Unit
V μA μA V mS
Ω
Ω pF pF pF ns ns ns ns nC nC nC V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2014 May, 2014
50714 TKIM TC-00003062/20608PE TIIM TC-00001164 No.A1039-1/5
6HP04CH
Drain Current, ID -- mA
ID -- VDS
--400
--10.0V
--6.0V
--300 --4.5V
--12.0V
--4.0V
--200
--100
0 0
14 12 10
VGS= --3V
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
Drain to Source Voltage, VDS -- V IT17336
RDS(on) -- VGS
Ta=25°C
--190mA
8
6
4
ID= --100mA
2
Drain Current, ID -- mA
--400
VDS= --10V
--350
ID -- VGS
Ta=75°C --25°C
25°C
--300
--250
--200
--150
--100
--50
0 0 --1 --2 --3 --4 --5
Gate to Source Voltage, VGS -- V IT17337
RDS(on) -- Ta
14
12
10
8 6 4
VGS= --4V, ID= VGS= --10V, I
--100mA D= --190mA
2
Static Drain to Source On-State Resistance, RDS(on) -- Ω
Static Drain to Source On-State Resistance, RDS(on) -- Ω
Forward Transfer Admittance, |yfs | -- mS
0 0
1000 7 5 3 2
100 7 5 3 2
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate to Source Voltage, VGS -- V
| yfs | -- ID
IT17338
VDS= --10V
Ta=
--25°C 75°C
25°C
10 7 5
3 2
1 --1
23
1000 7 5
3 2
100 7 5
3 2
10 7 5
3 2
td(off) tf td(on) tr
5 7 --10 2 3 5 7 --100 2 3
Drain Current, ID -- mA
SW Time -- ID
5 7--1000 IT17340
VDD= --30V VGS= --10V
1
--0.1
23
5 7 --1
23
5 7 --10
Drain Current, ID -- A
IT17342
Ciss, Coss, Crss -- pF
Source Current, IS -- mA
0 --60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT17339
--1000 7 5
IS -- VSD
VGS=0V
3 2
--100 7 5
3 2
--10 7 5 3 2
--1 0
100 7 5
Ta=75°C 25°C
--25°C
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Diode Forward Voltage, VSD -- V IT17341
Ciss, Coss, Crss -- VDS
f=1MHz
3 Ciss
2
10 Coss
7
5 Crss
3 2
1 0 --5 --10 --15 --20 --25 --30
Drain to Source Voltage, VDS -- V IT17343
No.A1039-2/5
Switching Time, SW Time -- ns
Gate to Source Voltage, VGS -- V
6HP04CH
--10
VDS= --30V
--9
VGS -- Qg
--8
--7
--6
--5
--4
--3
--2
--1
0
0 0.2 0.4 0.6 0.8 1.0
Total Gate Charge, Qg -- nC
IT17344
PD -- Ta
0.8
When mounted on ceramic substrate (900mm2✕0.8mm)
0.7
0.6
0.5
0.4
Drain Current, ID -- A
SOA
--10 7
5
3 2
IDP= --1480mA (PW≤10μs)
--1.0
7 5
ID= --370mA
3
2
--0.1 7 5
3 2
--0.01
Operation
in
this
DC area
op1e0r0am1ti0osmn1sm1s00μs
is limited by RDS(on).
7 5
3 2
--0.001 --0.01 2 3
Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm)
5 7--0.1 2 3 5 7 --1 2 3 5 7--10 2 3
5 7--100
Drain to Source Voltage, VDS -- V IT17345
0.3 0.2
0.1
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT17346
Allowable Power Dissipation, PD -- W
No.A1039-3/5
Package Dimensions 6HP04CH-TL-W
CPH3 CASE 318BA ISSUE O
Unit : mm
1: Gate 2: Source 3: Drain
6HP04CH
Land Pattern Example
0.6
1.4 2.4
0.95 0.95
Ordering & Package Information
Device
Package
Shipping
6HP04CH-TL-W
CPH3, SC-59 SOT-23, TO-236
3,000 pcs. / reel
memo Pb-Free.