EFC6612R

Ordering number : ENA2329A EFC6612R Power MOSFET 20V, 5.1mΩ, 23A, Dual N-Channel http://onsemi.com Features  2.5V drive  Protection diode in  Halogen free compliance  Common-drain type  2KV ESD HBM Applications  Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Source to Source Voltage VSSS Gate to Source Voltage VGSS Source Current (DC) IS Source Current (Pulse) Total Dissipation ISP PW100s, duty cycle1% PT When mounted on ceramic substrate (5000mm20.8mm) Junction Temperature Tj Storage Temperature Tstg Value 20 12 23 100 2.5 150 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (5000mm20.8mm) Symbol RJA Value 50 Unit C/W Electrical Characteristics at Ta  25C Parameter Source to Source Breakdown Voltage Zero-Gate Voltage Source Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Symbol V(BR)SSS ISSS IGSS VGS(th) gFS Conditions IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=±8V, VSS=0V VSS=10V, IS=1mA VSS=10V, IS=3A Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 min 20 0.5 Value Unit typ max V 1 A 1 A 1.3 V...