Power MOSFET
MCH6660
Power MOSFET
20V, 136mΩ, 2A, –20V, 266mΩ, –1.5A Complementary Dual
www.onsemi.com
Features
• ON-resistance ...
Description
MCH6660
Power MOSFET
20V, 136mΩ, 2A, –20V, 266mΩ, –1.5A Complementary Dual
www.onsemi.com
Features
ON-resistance Nch : RDS(on)1=105mW(typ.) Pch : RDS(on)1=205mW(typ.) Pb-Free, Halogen Free and RoHS Compliance Ultrasmall Package MCPH6(2.0mm×2.1mm×0.85mmt) Nch MOSFET and Pch MOSFET are put in MCPH6 Package
1.8V Drive ESD Diode - Protected Gate
Applications
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit
N-channel P-channel 20 --20
±10 ±10 2 --1.5 8 --6 0.8 150
--55 to +150
Unit V V A A W °C °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Package Dimensions unit : mm (typ)
7022A-006
2.0 654
0.15
MCH6660-TL-H MCH6660-TL-W
Product & Package Information
Package
: MCPH6
JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
2.1 0.07 0.85 0.25 1.6 0.25
LOT No. LOT No.
0 to 0.02
1 23 0.65 0.3
123
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
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