2SK2377

Power F-MOS FETs 2SK2377 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive s Applications q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator s Absolute Maximum Ratings (Tc = 25˚C) Parameter Symbol Rating Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability VDSS VGSS ID IDP EAS * 170 ±20 ±20 ±40 200 Allowable power dissipation TC= 25˚C Ta= 25˚C PD 50 2 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 * L=1mH, IL= 20A, 1 pulse Unit V V A A mJ W ˚C ˚C s Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on) 1 RDS(on) 2 | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) Condition VDS=140V, VGS= 0 VGS=±20V, VDS= 0 ID=1mA, VGS= 0 VDS=10V, ID=1mA VGS=10V, ID=10A VGS= 4V, ID=10A VDS=10V, ID=10A IDR=20A, VGS= 0 VDS=10V, VGS= 0, f=1MHz VDD=100V, ID=10A VGS=10V, RL=10Ω 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 0....