B1592

Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification s Features q Low collector to emitter saturation voltage VCE(sat). q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Peak collector current ICP* Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg * Applied are shot pulse of ≤1ms width Ratings –30 –25 –11 –10 –3 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 5.0±0.2 Unit: mm 4.0±0.2 0.7±0.2 8.0±0.2 13.5±0.5 0.7±0.1 1.27 +0.15 0.45 –0.1 +0.15 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.15 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –30 V Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency VCEO VEBO hFE*1 VCE(sat) fT IC = –1mA, IB = 0 –25 V IE = –10µA, IC = 0 –11 V VCE = –2V, IC = –1.4A*2 90 450 IC = –1.4A, IB = –25mA*2 – 0.16 – 0.22 V VCB = –6V, IE = 50mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 85 pF *2 Pulse measurement *1hFE Rank classification Rank Q R hFE 90 ~ 180 130 ~ 450 1 Collector power dissipation PC (W) Transistor PC — Ta 1.2 1.0 0....