NTTFS4965NF
Power MOSFET
30 V, 64 A, Single N−Channel, WDFN8
Features
• Integrated Schottky Diode • Low RDS(on) to Min...
NTTFS4965NF
Power MOSFET
30 V, 64 A, Single N−Channel, WDFN8
Features
Integrated
Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant
Applications
CPU Power Delivery Synchronous Rectification for DC−DC Converters Low Side Switching Telecom Secondary Side Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
http://onsemi.com
V(BR)DSS 30 V
RDS(on) MAX 3.5 mW @ 10 V 5.2 mW @ 4.5 V
ID MAX 64 A
N−Channel MOSFET D
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
Power Dissipation (Note 1)
RqJA
TA = 25°C TA = 85°C TA = 25°C
Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C TA = 85°C
Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2)
Steady State
TA = 25°C
TA = 25°C TA = 85°C
Power Dissipation RqJA (Note 2)
TA = 25°C
Continuous Drain Current RqJC (Note 1)
TC = 25°C TC = 85°C
Power Dissipation RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD ID
PD ID
PD ID
PD IDM TJ, Tstg
30 V ±20 V 22 A 15.9 2.69 W
32.4 A 23.4 5.85 W
16.3 A 11.7 1.47 W
64 46 22.73
A W
192 −55 to +150
A °C
G
1
WDFN8 (m8FL) CASE 511AB
S
MARKING DIAGRAM 1
SD S 4965 D S AYWWG D GGD
4965 A Y WW
G
= Specific Device Code = Assembly Location ...