SSF7NS65G

Main Product Characteristics VDSS RDS(on) ID 650V 0.58Ω (typ.) 7A ① Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product TO-251 SSF7NS65G 650V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description The SSF7NS65G series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=15.2mH Avalanche Current @ L=15.2mH Operating Junction and Storage Temperature Range Max. 7① 5① 28 83 0.67 650 ± 30 68 3 -55 to +150 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 7 Rev.1.2 SSF7NS65G 650V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 1.5 83 Units ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Co(er) Co(tr) Parameter Drain-to-Sour...