800V N-Channel MOSFET
Main Product Characteristics
VDSS
800V
RDS(on) 1.38Ω(typ.)
ID 8A Features and Benefits
TO-220
Advanced MOSFET pr...
Description
Main Product Characteristics
VDSS
800V
RDS(on) 1.38Ω(typ.)
ID 8A Features and Benefits
TO-220
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product
SSF8N80
800V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=25mH Avalanche Current @ L=25mH Operating Junction and Storage Temperature Range
Max. 8 5.1 32
178 1.43 800 ± 30 512 6.4 -55 to + 150
Units
A
W W/°C
V V mJ A °C
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Rev.1.1
SSF8N80
800V N-Channel MOSFET
Thermal Resistance
Symbol RθJC RθJA
Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 0.7 62.5
Units ℃/W ℃/W
Electrical Characteristics @TA=25℃ ...
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