Document
Ordering number : EN6611B
MCH6103/MCH6203
Bipolar Transistor
(–)50V, (–)1A, Low VCE(sat), (PNP)NPN Single MCPH6
http://onsemi.com
Applicaitons
• Relay drivers, lamp drivers, motor drivers, flash
Features
• Adoption of MBIT processes
• Large current capacity
• Low collector-to-emitter saturation voltage
• High-speed switching
• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)
• High allowable power dissipation
Specifications ( ) : MCH6103
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Symbol
VCBO VCES VCEO VEBO
Conditions
Ratings (--50)80 (--50)80 (--)50 (--)5
Unit V V V V
Continued on next page.
Package Dimensions unit : mm (typ) 7022A-007
2.0 654
0.15
MCH6103-TL-E MCH6203-TL-E
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
0 to 0.02
2.1 0.07 0.85 0.25 1.6 0.25
1 23 0.65 0.3
123 654
1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector
MCPH6
TL
Marking AC
CC
LOT No. LOT No.
LOT No. LOT No.
MCH6103
MCH6203
Electrical Connection
1, 2, 5, 6
1, 2, 5, 6
33
4 MCH6103
4 MCH6203
Semiconductor Components Industries, LLC, 2013 September, 2013
80812 TKIM/D1004 TSIM TB-00000351/N2000TS (KOTO) TA-2974 No.6611-1/8
MCH6103/MCH6203
Continued from preceding page.
Parameter Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
IC ICP IB PC Tj
Tstg
Conditions When mounted on ceramic substrate (600mm2×0.8mm)
Ratings (--)1.0 (--)3 200 1.0 150
--55 to +150
Unit A A mA W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time
ICBO IEBO hFE fT Cob
VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf
VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz IC=(--)500mA, IB=(--)10mA IC=(--)300mA, IB=(--)6mA IC=(--)500mA, IB=(--)10mA IC=(--)10μA, IE=0A IC=(--)100μA, RBE=0Ω IC=(--)1mA, RBE=∞ IE=(--)10μA, IC=0A
See specified Test Circuit.
min
200
(--50)80 (--50)80
(--)50 (--)5
Ratings typ
420 (9)6 (--280)130 (--145)90 (--)0.81
(36)38 (173)332
(28)40
max (--)0.1 (--)0.1
560
(--430)190 (--220)135
(--)1.2
Unit
μA μA
M.