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MCH6103 Dataheets PDF



Part Number MCH6103
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bipolar Transistor
Datasheet MCH6103 DatasheetMCH6103 Datasheet (PDF)

Ordering number : EN6611B MCH6103/MCH6203 Bipolar Transistor (–)50V, (–)1A, Low VCE(sat), (PNP)NPN Single MCPH6 http://onsemi.com Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Specifications ( ) : MCH6103 Absolut.

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Ordering number : EN6611B MCH6103/MCH6203 Bipolar Transistor (–)50V, (–)1A, Low VCE(sat), (PNP)NPN Single MCPH6 http://onsemi.com Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Specifications ( ) : MCH6103 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Symbol VCBO VCES VCEO VEBO Conditions Ratings (--50)80 (--50)80 (--)50 (--)5 Unit V V V V Continued on next page. Package Dimensions unit : mm (typ) 7022A-007 2.0 654 0.15 MCH6103-TL-E MCH6203-TL-E Product & Package Information • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL 0 to 0.02 2.1 0.07 0.85 0.25 1.6 0.25 1 23 0.65 0.3 123 654 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector MCPH6 TL Marking AC CC LOT No. LOT No. LOT No. LOT No. MCH6103 MCH6203 Electrical Connection 1, 2, 5, 6 1, 2, 5, 6 33 4 MCH6103 4 MCH6203 Semiconductor Components Industries, LLC, 2013 September, 2013 80812 TKIM/D1004 TSIM TB-00000351/N2000TS (KOTO) TA-2974 No.6611-1/8 MCH6103/MCH6203 Continued from preceding page. Parameter Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol IC ICP IB PC Tj Tstg Conditions When mounted on ceramic substrate (600mm2×0.8mm) Ratings (--)1.0 (--)3 200 1.0 150 --55 to +150 Unit A A mA W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz IC=(--)500mA, IB=(--)10mA IC=(--)300mA, IB=(--)6mA IC=(--)500mA, IB=(--)10mA IC=(--)10μA, IE=0A IC=(--)100μA, RBE=0Ω IC=(--)1mA, RBE=∞ IE=(--)10μA, IC=0A See specified Test Circuit. min 200 (--50)80 (--50)80 (--)50 (--)5 Ratings typ 420 (9)6 (--280)130 (--145)90 (--)0.81 (36)38 (173)332 (28)40 max (--)0.1 (--)0.1 560 (--430)190 (--220)135 (--)1.2 Unit μA μA M.


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