ZXM62P03G

30V P-CHANNEL ENHANCEMENT MODE MOSFET ZXM62P03G SUMMARY V(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · Low on-resistance · Fast switching speed · Low threshold · Low gate drive · SOT223 package APPLICATIONS · DC-DC Converters · Audio Output Stages · Relay and Solenoid driving · Motor Control ORDERING INFORMATION DEVICE ZXM62P03GTA ZXM62P03GTC REEL SIZE 7” 13” TAPE QUANTITY WIDTH PER REEL 12mm 1000 units 12mm 4000 units DEVICE MARKING · ZXM6 2P03 SOT223 PINOUT Top View ISSUE 2 - DECEMBER 2002 1 ZXM62P03G ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS= -10V; TA=25°C)(b) (VGS= -10V; TA=70°C)(b) (VGS= -10V; TA=25°C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD PD Tj:Tstg LIMIT -30 Ϯ20 -4.0 -3.2 -2.9 -13 2.4 -13 2.0 16 3.9 31 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 62.5 °C/W Junction to Ambient (b) RθJA 32.2 °C/...