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IL6083

Integral

PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR

IL6083, IL6083-01 PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR Description of Main Functions: Microcircu...


Integral

IL6083

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Description
IL6083, IL6083-01 PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR Description of Main Functions: Microcircuit is the integrated circuit of the pulse width modulation controller for control of the power Nchannel MOS transistor, used a switch. Controller is ideal for application brightness control of the lamps, used in the car dashboard panel. Microcircuit is developed for the gate control of the power MOS transistor. Functional Features: Performs pulse width modulation with the frequency of up to 2 kHz. Protection from short circuit, increased voltage in the load and incorrect supply voltage polarity UBatt. Ensures continuity of the working cycle from 18 to 100% - IL6083N (from 10 to 100% - IL6083N-01). Internal limitation of the voltage pulse rise rate in the lamp. Protection from ground bus rupture. DIP-8 package of type MS-001BA TA=from -40oC to +110oC Identification of Pins in the Package UBatt 1 GND 2 UI 3 Osc 4 8 Output 7 2Us 6 Sense 5 Delay Features: Microcircuit is supplied from the car borne supply mains Minimum number of the external time setting components. Operating voltage range of the microcircuit supply from 9 V to 16,5 V. Table of Limit Modes Description of Parameter, Identification Not less Not more Supply voltage UBatt Storage temperature Tstg 32,5 -55 +125 Chip maximum temperature Tj(max) +150 Temperature resistance chip - environment Rth j-a, =120 oC/Wt Unit of Measurement V oС oС 1 IL6083, IL6083-01 Table of Limit-Permissible Mo...




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