HUF75344A3

HUF75344A3 N-Channel UltraFET Power MOSFET October 2007 HUF75344A3 N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ tm Features RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A RoHS compliant Description This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motro drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. D G DS TO-3PN MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter VDSS VGSS ID IDM EAS PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 130oC) - Pulsed Single Pulsed Avalanche Energy Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient G (Note 1) S Ratings 55 ±20 75 300 1153 288.5 1.92 -55 to +175 300 Ratings 0.52 40 Uni...