DMN2170U

NEW PRODUCT DMN2170U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance 70mΩ @VGS = 4.5V 100mΩ @VGS = 2.5V 170mΩ @VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 6) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate Mechanical Data Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) SOT-23 Drain D ESD PROTECTED TO 3kV TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) Characteristic Gate Gate Protection Diode Source Equivalent Circuit GS TOP VIEW Symbol VDSS VGSS ID IDM Value 20 ±12 2.3 8 Units V V A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 600 208 -55 to +150 Units mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHA...