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Amplifier Transistors. LM8050I Datasheet

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Amplifier Transistors. LM8050I Datasheet
















LM8050I Transistors. Datasheet pdf. Equivalent













Part

LM8050I

Description

Amplifier Transistors



Feature


LM8050I, LM8050J Amplifier Transistors N PN Silicon MAXIMUM RATINGS Rating Coll ector-Emitter Voltage Collector-Base Vo ltage Emitter-Base Voltage Collector Cu rrent – Continuous Total Device Dissi pation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C D erate above 25°C Operating and Storage Junction Temperature Range THERMAL CHA RACTERISTICS Characteris.
Manufacture

ON Semiconductor

Datasheet
Download LM8050I Datasheet


ON Semiconductor LM8050I

LM8050I; tic Thermal Resistance, Junction to Ambi ent Thermal Resistance, Junction to Cas e Symbol VCEO VCBO VEBO IC PD PD TJ, T stg Symbol RθJA RθJC Value 25 30 6.0 800 Unit Vdc Vdc Vdc mAdc 625 mW 5.0 mW/°C 1.5 12 –55 to +150 Watts mW /°C °C Max Unit 200 °C/W 83.3 °C/W http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER 1 23 TO–92 CASE 29 STYLE 1 MARKING DIAGRAMS LM 8050x YWW.


ON Semiconductor LM8050I

LM8050x = Specific Device Code x = I o r J Y = Year WW = Work Week ORDERING I NFORMATION Device Package Shipping LM8050I TO–92 5000 Units/Box LM805 0J TO–92 5000 Units/Box © Semicon ductor Components Industries, LLC, 2001 August, 2001 – Rev. 0 1 Publicatio n Order Number: LM8050I/D LM8050I, LM8 050J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise not.


ON Semiconductor LM8050I

ed) Characteristic Symbol Min Typ M ax Unit Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)C EO 25 – – Vdc Collector–Base Breakdown Voltage (IC = 0.5 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff C urrent (VCB = 15 Vdc, IE = 0) V(BR)CBO 30 – – Vdc V(BR)EBO 6.0 – – Vdc ICBO – – 50 nAdc ON CHA.





Part

LM8050I

Description

Amplifier Transistors



Feature


LM8050I, LM8050J Amplifier Transistors N PN Silicon MAXIMUM RATINGS Rating Coll ector-Emitter Voltage Collector-Base Vo ltage Emitter-Base Voltage Collector Cu rrent – Continuous Total Device Dissi pation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C D erate above 25°C Operating and Storage Junction Temperature Range THERMAL CHA RACTERISTICS Characteris.
Manufacture

ON Semiconductor

Datasheet
Download LM8050I Datasheet




 LM8050I
LM8050I, LM8050J
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Symbol
RθJA
RθJC
Value
25
30
6.0
800
Unit
Vdc
Vdc
Vdc
mAdc
625 mW
5.0 mW/°C
1.5
12
–55 to
+150
Watts
mW/°C
°C
Max Unit
200 °C/W
83.3 °C/W
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
1
23
TO–92
CASE 29
STYLE 1
MARKING DIAGRAMS
LM
8050x
YWW
LM8050x = Specific Device Code
x = I or J
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
LM8050I
TO–92
5000 Units/Box
LM8050J
TO–92
5000 Units/Box
© Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 0
1
Publication Order Number:
LM8050I/D




 LM8050I
LM8050I, LM8050J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
25
– Vdc
Collector–Base Breakdown Voltage
(IC = 0.5 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
V(BR)CBO
30
– Vdc
V(BR)EBO
6.0
– Vdc
ICBO
– 50 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 350 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
LM8050I
LM8050J
hFE
100 – 200
150 – 300
60 –
VCE(sat)
– 0.5 Vdc
Base–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
– 1.2 Vdc
http://onsemi.com
2




 LM8050I
A
R
SEATING
PLANE
B
P
L
K
XX
H
V
G
C
1
N
N
LM8050I, LM8050J
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
D
J
SECTION X–X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.021
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 ---
L 0.250 ---
N 0.080 0.105
P --- 0.100
R 0.115 ---
V 0.135 ---
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.407 0.533
1.15 1.39
2.42 2.66
0.39 0.50
12.70 ---
6.35 ---
2.04 2.66
--- 2.54
2.93 ---
3.43 ---
STYLE 1:
PIN 1.
2.
3.
EMITTER
BASE
COLLECTOR
http://onsemi.com
3




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