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MBR3060

ON Semiconductor

Axial Lead Rectifier

MBR3060 Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diod...


ON Semiconductor

MBR3060

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Description
MBR3060 Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Extremely Low Vf Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode indicated by Polarity Band ESD Ratings: Machine Model = A Human Body Model = 2 Marking: MBR3060 http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 60 VOLTS AXIAL LEAD CASE 59−09 PLASTIC MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TL = 125°C (RqJL = 13°C/W, P.C. Board Mounting) Non−Repetitive Peak Surge Current Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Peak Operating Junction Temperature (Forward Current Applied) Sym...




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