SSF2418B

DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. SSF2418B 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package APPLICATIONS ●Battery protection ●Load switch ●Power management Schematic Diagram Marking and Pin Assignment SOT23-6 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2418B SSF2418B SOT23-6 Ø330mm Tape Width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 6 30 1.3 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 95 ℃/W www.goodark.com Page 1 of 4 Rev.1.0 SSF2418B 20V Dual N-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHAR...