SSF3036C

Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A Features and Benefits  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3036C 30V Complementary MOSFET DFN 3x2-8L Bottom View N-Channel Mosfet P-Channel Mosfet Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol Parameter ID @ TC = 25°C IDM VGS PD @TC = 25°C TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current ② Gate to source voltage Power Dissipation ③ Operating Junction and Storage Temperature Range Thermal Resistance Max. N-Channel P-Channel 4 ① -3.6 ① 16 -14.4 ±12 ±12 2.1 1.3 -55 to + 150 -55 to + 150 Units A V W °C Symbol RθJA Characteristics Junction-to-ambient (t ≤ 5s) ④ Typ. — N-channel 60 Max. P-Channel 95 Units ℃/W www.goodark.com Page 1 of 5 Rev.1.0 SSF3036C 30V Complementary MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parame...