C5988

C5988 Silicon NPN transistor epitaxial type C5988 [ Applications ] High current amplifier [ Feature ] Collector current IC= 6A Very low collector saturation voltage VCE(sat)= 550mV (Max.) at IC= 6A, IB= 300mA Exellent gain characteristics specified up to 10 ampers PNP complementary pair with A5988 [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Maximum ratings Collector-base voltage VCBO 150 Collector-emitter voltage VCEO 60 Emitter-base voltage VEBO 6 Collector current (DC) IC 6 Collector current (Pulse) ICP 20 Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Unit V V V A A C C [ Electrical characteristics (Ta=25C) ] Characteristic Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 150 170 - V IC= 100uA Collector-emitter breakdown voltage BVCEO 60 70 - V IC= 10mA Emitter-base breakdown voltage BVEBO 6 8 - V IE= 100uA Collector cut-off current ICBO - - 50 nA VCB= 120V Emitter cut-off current IEBO - - 10 nA VEB= 6V DC current gain 1 hFE 1 100 - - - VCE= 1V, IC= 10mA DC current gain 2 hFE 2 120 200 300 - VCE= 1V, IC= 2A DC current gain 3 hFE 3 75 100 - - VCE= 1V, IC= 5A DC current gain 4 hFE 4 - 30 - - VCE= 1V, IC= 10A Collector-emitter saturation voltage 1 VCE(sat) 1 - 20 50 mV IC= 100mA, IB= 5mA Collector-emitter saturation voltage 2 VCE(sat) 2 - 80 120 mV IC= 1A, IB= 50mA Collector-emitter saturation voltage 3 VCE(sat) 3 - 150 220 mV IC= 2A, IB= 100mA...