Power MOSFET
Ordering number : ENA1777A
ECH8661
Power MOSFET
30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8
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Description
Ordering number : ENA1777A
ECH8661
Power MOSFET
30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8
http://onsemi.com
Features
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free compliance Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD PT Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm)
N-channel P-channel 30 --30
±20 ±20 7 --5.5
40 --40 1.3 1.5 150
--55 to +150
Unit V V A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7011A-001
Top View 2.9
85
ECH8661-TL-H
0.15 0 to 0.02
Product & Package Information
Package
: ECH8
JEITA, JEDEC
:-
Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TG
TL LOT No.
2.8 ...
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