NVC6S5A354PLZ

NVC6S5A354PLZ Power MOSFET 60V, 100mΩ, 4A, P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features  4V drive  High ESD protection  Low On-Resistance  Pb-Free, Halogen Free and RoHS compliance Typical Applications  Reverse Battery Protection  High Side Load Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS 20 V Drain Current (DC) (Note 2) Drain Current (DC) (Note 3) ID 4 A 3 A Drain Current (Pulse) PW  10s, duty cycle  1% IDP 16 A Power Dissipation Ta=25C(Note 2) Power Dissipation Ta=25C(Note 3) 1.9 W PD 0.9 W Junction Temperature and Storage Temperature Tj, Tstg 55 to +175 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Junction to Ambient (Note 2) (Note 3) RJA 78.1 160 Note 2 : Surface mounted on ceramic substrate(1500mm2  0.8mm). Note 3 : Surface mounted on FR4 board using a 92mm2, 1 oz. Cu pad. Unit C/W C/W www.onsemi.com VDSS 60V RDS(on) Max 100mΩ@ 10V 135mΩ@ 4....