NVMFD5853NWF

NVMFD5853N, NVMFD5853NWF MOSFET – Dual N-Channel, Dual SO-8FL 40 V, 10 mW, 53 A Features Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5853NWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable This is a Pb−Free and Halogen−Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- TC = 25°C ID rent RqJC (Notes 1, 2, 3) Steady TC = 100°C Power Dissipation RqJC (Notes 1, 2) State TC = 25°C PD TC = 100°C 53 A 37 58 W 29 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1, 2 & 3) Steady TA = 100°C Power Dissipation RqJA (Notes 1 & 2) State TA = 25°C PD TA = 100°C 12 A 8.7 3.1 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 165 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C 175 Source Current (Body Diode) IS 53 A Single Pulse Drain−to−Source Avalanche EAS Energy (TJ = 25°C, IL(pk) = 28.3 A, L = 0.1 mH) 40 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERM...