PCP1402

Ordering number : ENA2303A PCP1402 Power MOSFET 250V, 2.4Ω, 1.2A, Single N-Channel http://onsemi.com Features  On-resistance RDS(on)=1.8Ω (typ)  Input Capacitance Ciss=210pF (typ)  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation VDSS VGSS ID IDP PD PW10s, duty cycle1% Tc=25C When mounted on ceramic substrate (600mm20.8mm) Junction Temperature Tj Storage Temperature Tstg Value 250 30 1.2 4.8 3.5 1.5 150 55 to +150 Unit V V A A W W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient When mounted on ceramic substrate (600mm20.8mm) Symbol RJC RJA Value 35.7 83.3 Unit C /W C /W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Electrical Characteristics at Ta  25C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance V(BR)DSS...