PCP1405

Ordering number : ENA2326A PCP1405 Power MOSFET 250V, 6.5Ω, 0.6A, Single N-Channel http://onsemi.com Features  On-resistance RDS(on)1=5Ω (typ)  2.5V drive  Protection diode in  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain to Gate Voltage Gate to Drain Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation VDSS VGSS VDGS VGDS ID IDP PD PW10s, duty cycle1% Tc=25C When mounted on ceramic substrate (600mm20.8mm) Junction Temperature Tj Storage Temperature Tstg Value 250 10 250 10 0.6 2.4 3.5 1.3 150 - 55 to +150 Unit V V V V A A W W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient When mounted on ceramic substrate (600mm20.8mm) Symbol RJC RJA Value 35.7 96.1 Unit C/W Electrical Characteristics at Ta  25C Parameter Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Symbol V(BR)DSS IDSS IGSS VGS(th) gFS Conditions ID=1mA, VGS=0V VDS=250V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.3A min 250 0.4 Value Unit typ max V 1 A 10 A 1.3 V 1.4 S Continued on next pa...