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PJE5V0U8TB6

Pan Jit International

Low Capacitance ESD Protection

PPJE5V0U8TB6 Low Capacitance ESD Protection VRWM 5V Features  IEC61000-4-2(ESD): ±17kV Air, ±12kV Contact Complian...


Pan Jit International

PJE5V0U8TB6

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PPJE5V0U8TB6 Low Capacitance ESD Protection VRWM 5V Features  IEC61000-4-2(ESD): ±17kV Air, ±12kV Contact Compliance  IEC61000-4-4(EFT): 40A(5/50nS)  IEC61000-4-5(Lightning): 5A(8/20S)  Low leakage current, maximum 0.1A at rated voltage  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-563, Plastic  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0001 ounces, 0.0026 grams  Marking: U8 Applications  USB2.0 Data Line and Power Line Protection  Video Graphics Cards  Monitors and Flat Panel Displays Notebook computers  Digital Video Interface(DVI)  10/100/1000 Ethernet  ATM Interfaces  Control Signal Lines Protection Maximum Ratings o (TA=25 C unless otherwise noted) Fig.204(Top View) PARAMETER ESD IEC61000-4-2(Air) ESD IEC61000-4-2(Contact) Operating Junction Temperature Storage Temperature Range SYMBOL VESD TJ TSTG LIMIT ±17 ±12 -55 to +150 -55 to +150 UNITS kV oC oC September 7,2015-REV.01 Page 1 PPJE5V0U8TB6 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Reverse Stand-Off Voltage (Note 1) Reverse Breakdown Voltage Reverse leakage current Clamping Voltage Off State Junction Capacitance SYMBOL VRWM VBR IR VCL CJ TEST CONDITION IBR=1mA, PIN 6 to GND VR=5V, I/O to GND IPP=1A, tP=8/20s, any I/O pin to GND IPP=5A, tP=8/20s, any I/O pin to GND 0Vdc Bias f=1MHz, Between any I/O pins to GND 0Vd...




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