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PJEC3V0V1WS

Pan Jit International

Very Low Capacitance TVS/ESD Protection

PPJEC3V0V1WS Very Low Capacitance TVS/ESD Protection VRWM 3V Features  Bidirectional ESD protection of one line  ...


Pan Jit International

PJEC3V0V1WS

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Description
PPJEC3V0V1WS Very Low Capacitance TVS/ESD Protection VRWM 3V Features  Bidirectional ESD protection of one line  IEC61000-4-2(ESD):±30kV Air,±30kV Contact Compliance  IEC61000-4-4(EFT):40A(5/50nS)  IEC61000-4-5(Lightning):15A(8/20uS)  Very Low Capacitance:1.2 pF Maximum  Protect one data, control or power line  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOD-323, Plastic  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00014 ounces, 0.0041 grams  Marking: B1 Applications  Mobile Phones and accessories  Desktops, Servers and Notebook  Hand held portable  Digital Cameras  Computer Interfaces Protection  Serial and Parallel Ports Protection  Control Signal Lines Protection Fig.97(TOP VIEW) Maximum Ratings o (TA=25 C unless otherwise noted) PARAMETER ESD IEC61000-4-2(Air) ESD IEC61000-4-2(Contact) Operating Junction Temperature Storage Temperature Range SYMBOL VESD TJ TSTG July 14,2015-REV.01 LIMIT ±30 ±30 -55 to +125 -55 to +150 UNITS kV ℃ ℃ Page 1 PPJEC3V0V1WS Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Reverse Stand-Off Voltage Reverse Break Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage TLP(Note 1) Dynamic Resistance Off State Junction Capacitance SYMBOL VRWM VBR IR VCL VCL RDYN CJ TEST CONDITION IT=1mA VR=3.0V IPP=1A, tP=8/20μ s IPP=5A, tP=8/20μ s IPP=4A, tP=100ns...




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