SCH1337

SCH1337 Power MOSFET –30V, 150mΩ, –2A, Single P-Channel This Low-profile High-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance 4V drive Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) Typical Applications LCD Driver Load Switch Voltage Protection SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS −30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID −2 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −8 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value Unit 156.2 °C/W www.onsemi.com VDSS −30V RDS(on) Max 150mΩ@ −10V 255m...