Document
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
FGPF15N60UNDF
600 V, 15 A Short Circuit Rated IGBT
Features
• Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant
September 2013
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
C
GCE
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
VCES VGES IC
ICM (1) IF
PD
TJ Tstg
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current
Diode Forward Current Diode Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range
@ TC = 25oC @ TC = 100oC
@ TC = 25oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
G
E
Ratings
600 ± 20 30 15 45 15 7.5 42 17 -55 to +150 -55 to +150
Thermal Characteristics
Symbol
RθJC(IGBT) RθJC(Diode) RθJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes: 2: Mountde on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
1
Typ.
-
Max.
3.0 4.9 62.5
Unit
V V A A A A A W W oC oC
Unit
oC/W oC/W oC/W
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Package Marking and Ordering Information
Device Marking
Device
FGPF15N60UNDF FGPF15N60UNDF
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50ea
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES ICES IGES
Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
VGE = 0 V, IC = 250 μA VCE = VCES, VGE = 0 V VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 15 mA, VCE = VGE IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V, TC = 125oC
Dynamic Characteristics
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V, f = 1MHz
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss
Tsc Short Circuit Withstand Time
VCC = 400 V, IC = 15 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25oC
VCC = 400 V, IC = 15 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125oC
VCC = 350 V, RG = 100 Ω, VGE = 15 V, TC = 150oC
600 - - V - - 1 mA - - ±10 μA
5.5 6.8 8.5 - 2.2 2.7
- 2.7 -
V V
V
- 619 - 80 - 24 -
pF pF pF
- 9.3 -
ns
- 9.8 -
ns
- 54.8 -
ns
-
9.9 12.8
ns
- 0.37 -
mJ
- 0.067 -
mJ
- 0.44 -
mJ
- 8.9 -
ns
- 9.9 -
ns
- 56.6 -
ns
- 13.2 -
ns
- 0.54 -
mJ
- 0.11 -
mJ
- 0.65 -
mJ
10 - - μs
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
2
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge
VCE = 400 V, IC = 15 A, VGE = 15 V
- 43 - nC - 6 - nC - 26 - nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 15 A
TC = 25oC TC= 125oC
trr Qrr
Diode Reverse Recovery Time
IF =15 A, dIF/dt = 200 A/μs Diode Reverse Recovery Charge
TC = 25oC TC= 125oC TC = 25oC TC= 125oC
Min.
-
Typ.
1.6 1.5 82.4 142 213 541
Max
2.2 -
Unit
V
ns -
- nC -
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
3
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
80 TC = 25oC
70
60
20V 17V 15V
Collector Current, IC [A]
50 VGE =12V 40
30
20
10
0 0.0 1.5 3.0 4.5 6.0 7.5 9.0
Collector-Emitter Voltage, VCE [V]
Figure 2. Typical Output Characteristics
80 TC = 125oC
70
60
20V 17V 15V
Collector Current, IC [A]
50
40 VGE = 12V
30
20
10
0 0.0 1.5 3.0 4.5 6.0 7.5 9.0
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Characteristics
80
70
Common Emitter VGE = 15V
60 TC = 25oC
TC = 125oC
50
Collector Current, IC [A]
40
30
20
10
0 012345
Collector-Emitter Voltage, VCE [V]
6
Collector Current, IC [A]
Figure 4. Transfer Characteristics
80 Common Emitter
70 VCE = 20V TC =.