Document
CHIPSET-IC.COM
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID 12A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=8A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C TC = 100 °C
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
PD Tj, Tstg
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/8/17
EMB20N03V
LIMITS ±20 12 9 48 8 3.2 1.6 21 8.3 2.5 1
‐55 to 150
UNIT V A
mJ W W °C
MAXIMUM 6 50
UNIT °C / W
p.1
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB20N03V
LIMITS
UNIT
MIN TYP MAX
STATIC
CHIPSET-IC.COM
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V
VGS = 10V, ID = 8A VGS = 4.5V, ID = 6A VDS = 5V, ID = 8A
DYNAMIC
30 1 1.5 12 15.5 25 16
3 ±100 1 25 20 30
V
nA A
A mΩ S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2
Gate‐Source Charge1,2 Gate‐Drain Charge1,2 Turn‐On Delay Time1,2 Rise Time1,2 Turn‐Off Delay Time1,2 Fall Time1,2
Ciss Coss Crss Rg Qg(VGS=10V) Qg(VGS=4.5V) Qgs Qgd td(on) tr td(off) tf
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 15V, VGS = 10V, ID = 8A
VDS = 15V, ID = 1A, VGS = 10V, RGS = 6Ω
520
88
pF
62
2.0 Ω
11.5
5
nC
1.6
2.8
9
12 30
nS
15
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current Pulsed Current3 Forward Voltage1 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge
IS ISM VSD trr IRM(REC) Qrr
IF = IS, VGS = 0V IF = IS, dlF/dt = 100A / S
2.3 A
9.2
1.2 V
45
nS
30 A
2
nC
2013/8/17
p.2
LSET-IC.COM E3 E1 E2 E
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB20N03V for EDFN 3 x 3
B20 N03
B20N03: Device Name
ABCDEFG ABCDEFG: Date Code
Outline Drawing
b 0.10
e
D D1
L1
Dimension in mm
Θ1
A1
c A
EMB20N03V
3.75 CHIP
0.6 0.5 2.05 0.6
Dimension A A1 b c D D1 E E1 E2 E3 e L L1 Ѳ1
Min.
0.70 0 0.24 0.10 2.95 2.25 3.15 2.95 1.65
0.30
0∘
Typ. 0.80 0.30 0.152 3.00 2.35 3.20 3.00 1.75 0.575 0.65 0.40 0.13 10∘
Max.
0.90 0.05 0.37 0.25 3.15 2.45 3.40 3.15 1.96
0.50
12∘
Recommended minimum pads
2.6 0.65 0.4
2013/8/17
p.3
Is ‐ Reverse Drain Current( A )CHIPSET
30
On‐Region Characteristics
VG S = 10V 6V
25 7V 5V
20
4.5V
15
I D ‐ Drain Current(A)
10
5
0
01 2
34
VD S ‐ Drain Source Voltage(V)
5
1.9 On‐Resistance Variation with Temperature I D = 8A VG S = 10V
1.6
R D S ( o n ) ‐ Normalized Drain‐Source On‐Resistance
1.3
1.0
0.7
0.4
‐50 ‐25
0 25
50 75 100 125 150
T J ‐ Junction Temperature (°C)
30
Transfer Characteristics
VD S = 10V
25 20
T A = ‐55° C
25° C
I D ‐ Drain Current(A)
15
10
125° C
5
0
1 1.5 2.0 2.5 3.0 3.5 VG S ‐ Gate‐Source Voltage( V )
2013/8/17
R D S ( O N) ‐ On‐Resistance( Ω-I )C.C
R D S( O N ) ‐NormalizedOM
Drain‐Source On‐Resistance
EMB20N03V
On‐Resistance Variation with Drain Current and Gate Voltage 2.4
2.2
2.0
1.8
1.6 1.4 1.2
1.0 0.8
0
V G S = 4.5 V
5.0 V
6.0 V 7.0 V
10 V
6 12 18 I D ‐ Drain Current(A)
24 30
On‐Resistance Variation with Gate‐Source Voltage 0.09 0.08 I D = 6 A 0.07
0.06
0.05 0.04 0.03 0.02 0.01
2
T A = 125°C
T A = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation with Source Current and Temperature 100
VG S = 0V
10 T A = 125° C
1 25° C
0.1 ‐55° C
0.01
0.001 0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS.