Power MOSFET
MCH3475
Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel
www.onsemi.com
Features
• High Speed Switching • 4V Drive • Pb...
Description
MCH3475
Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel
www.onsemi.com
Features
High Speed Switching 4V Drive Pb-Free and RoHS Compliance Halogen Free Compliance : MCH3475-TL-W
VDSS 30V
RDS(on) Max 180mΩ@ 10V 330mΩ@ 4V
ID Max 1.8A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID 1.8 A
Drain Current (Pulse) PW≤10μs, duty cycle≤1%
IDP 7.2 A
Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm)
Junction Temperature
PD Tj
0.8 W 150 °C
Storage Temperature
Tstg
−55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model
Thermal Resistance Ratings
Parameter
Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm)
Symbol RθJA
Value
Unit
156.2
°C/W
Electrical Connection
N-Channel
3
1 1 : Gate 2 : Source 3 : Drain
2
Packing Type : TL
Marking
LOT No. LOT No.
FG
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3
1
Publication Order Number : MCH3475/D
Electrical Characteristics at Ta = 25°C
Parameter...
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