MTP3055V

MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. On−resistance Area Product about One−half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology Faster Switching than E−FET Predecessors Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and TMOS E−FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous @ 25°C Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ 25°C Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 60 60 ± 20 ± 25 12 7.3 37 48 0.32 Operating and Storage Temperature Range TJ, Tstg −55 to 175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient Maximum Lea...