NTMFS5C645NL

NTMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N−Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 60 ±20 100 71 79 40 22 15 3.7 1.8 820 −55 to +175 V V A W A W A °C Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 100 A EAS 185 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 41 1. The entire application environment impacts the thermal resist...