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NTP4813NL Dataheets PDF



Part Number NTP4813NL
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTP4813NL DatasheetNTP4813NL Datasheet (PDF)

NTP4813NL Power MOSFET 30 V, 51 A, Single N−Channel, TO−220AB Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These Devices are Pb−Free and are RoHS Compliant Applications • Power Motor Control • High Current, High Side Switching • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Contin.

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NTP4813NL Power MOSFET 30 V, 51 A, Single N−Channel, TO−220AB Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These Devices are Pb−Free and are RoHS Compliant Applications • Power Motor Control • High Current, High Side Switching • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 85°C VDSS VGS ID 30 ±20 12.8 9.9 V V A Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C PD ID PD ID 3.75 W 10.2 A 7.9 2.40 W 51 A 39.5 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C tp=10ms TA = 25°C PD IDM 60 W 154 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt IDmaxPkg TJ, TSTG IS dV/dt 95 −55 to +175 50 6 A °C A V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 18 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) EAS 48.6 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com V(BR)DSS 30 V RDS(ON) MAX 13.1 mW @ 10 V 22 mW @ 4.5 V ID MAX 51 A D G S N−CHANNEL MOSFET MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 1 2 3 TO−220AB CASE 221A STYLE 5 NTP4813NLG AYWW 1 Gate 3 Source 2 Drain A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 1 1 Publication Order Number: NTP4813NL/D NTP4813NL THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA Value 2.5 40 62.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS = 0 V, ID = 250 mA VGS = 0 V, VDS = 24 V TJ = 25 °C TJ = 125°C VDS = 0 V, VGS = ±20 V Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH) VGS(TH)/TJ VGS = VDS, ID = 250 mA Drain−to−Source On Resistance Forward Transconductance Gate Resistance CHARGES AND CAPACITANCES RDS(on) gFS RG VGS = 10 V ID = 20 A VGS = 4.5 V ID = 20 A VDS = 15 V, ID = 10 A TA = 25°C Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 11.5 V, VDS = 15 V; ID = 30 A Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W Fall Time tf Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W Fall Time tf 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. Min 30 1.5 Typ Max Unit V 24.5 mV/°C 1 10 ±100 mA nA 5.5 10.5 17.6 6.7 0.80 2.5 V mV/°C 13.1 mW 22 S W 895 220 pF 120 7.7 10.8 1.6 nC 3.4 3.6 17 nC 10 21.5 ns 12 3.2 6.3 13.4 ns 17.6 1.6 www.onsemi.com 2 NTP4813NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = 30 A TJ = 125°C Reverse Recovery Time tRR Charge Time Discharge Time ta VGS = 0 V, dIs/dt = 100 A/ms, tb IS = 30 A Reverse Recovery Charge QRR 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 0.95 1.2 0.85 14.8 8.3 6.5 5.3 V ns nC www.onsemi.com 3 ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) NTP4813NL TYPICAL PERFORMANCE CURVES 60 10 V 6V 50 5 V TJ = 25°C 4.5 V 40 4V 30 3.8 V 20 3.6 V 10 3V 0 012 34 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Chara.


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