Document
NTP4813NL
Power MOSFET
30 V, 51 A, Single N−Channel, TO−220AB
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Motor Control • High Current, High Side Switching • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
TA = 25°C TA = 85°C
VDSS VGS ID
30 ±20 12.8
9.9
V V A
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJA (Note 2)
Power Dissipation RqJA (Note 2)
Continuous Drain Current RqJC (Note 1)
TA = 25°C
Steady State
TA = 25°C TA = 85°C TA = 25°C
TC = 25°C TC = 85°C
PD ID
PD ID
3.75 W
10.2 A 7.9 2.40 W
51 A 39.5
Power Dissipation RqJC (Note 1)
Pulsed Drain Current
TC = 25°C tp=10ms TA = 25°C
PD IDM
60 W 154 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxPkg
TJ, TSTG
IS
dV/dt
95 −55 to +175
50 6
A °C
A V/ns
Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 18 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
EAS
48.6 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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V(BR)DSS 30 V
RDS(ON) MAX 13.1 mW @ 10 V 22 mW @ 4.5 V
ID MAX 51 A
D
G
S N−CHANNEL MOSFET
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain 4
1 2 3
TO−220AB CASE 221A
STYLE 5
NTP4813NLG AYWW
1 Gate
3 Source
2 Drain
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 1
1
Publication Order Number: NTP4813NL/D
NTP4813NL
THERMAL RESISTANCE MAXIMUM RATINGS Parameter
Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol RqJC RqJA RqJA
Value 2.5 40 62.5
Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3)
V(BR)DSS V(BR)DSS/
TJ IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, VDS = 24 V
TJ = 25 °C TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH) VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance Gate Resistance CHARGES AND CAPACITANCES
RDS(on)
gFS RG
VGS = 10 V
ID = 20 A
VGS = 4.5 V
ID = 20 A
VDS = 15 V, ID = 10 A
TA = 25°C
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 11.5 V, VDS = 15 V; ID = 30 A
Turn−On Delay Time
td(ON)
Rise Time Turn−Off Delay Time
tr td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W
Fall Time
tf
Turn−On Delay Time
td(ON)
Rise Time Turn−Off Delay Time
tr td(OFF)
VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W
Fall Time
tf
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
Min 30
1.5
Typ Max Unit
V 24.5 mV/°C
1 10 ±100
mA nA
5.5
10.5 17.6 6.7 0.80
2.5 V
mV/°C
13.1 mW
22 S W
895 220 pF 120 7.7 10.8 1.6
nC 3.4 3.6 17 nC
10
21.5 ns
12
3.2
6.3
13.4 ns
17.6
1.6
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NTP4813NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 30 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time Discharge Time
ta VGS = 0 V, dIs/dt = 100 A/ms, tb IS = 30 A
Reverse Recovery Charge
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
0.95 1.2 0.85 14.8 8.3 6.5 5.3
V ns nC
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ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
NTP4813NL
TYPICAL PERFORMANCE CURVES
60 10 V
6V
50 5 V
TJ = 25°C 4.5 V
40 4V
30 3.8 V
20 3.6 V
10
3V 0
012 34 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Chara.