PJL9801

PPJL9801 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -5A Features  RDS(ON) , VGS@-10V, [email protected]<54mΩ  RDS(ON) , [email protected], [email protected]<61mΩ  RDS(ON) , [email protected], [email protected]<82mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOP-8 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0029 ounces, 0.083 grams  Marking: L9801 SOP-8 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -30 +12 5 20 2 16 -55~150 62.5 UNITS V V A A W mW/ oC oC oC/W December 11,2014-REV.00 Page 1 PPJL9801 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off ...