PPJQ2815
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-4.2A
Features
RDS(ON) ,
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[email protected]<52mΩ RDS(ON) ,
[email protected],
[email protected]<62mΩ RDS(ON) ,
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[email protected]<73mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN2020-6L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00032 ounces, 0.0093 grams Marking: 815
DFN2020-6L
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Pulsed Drain Current Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -20 +8 -4.2 -16.8 1.5 12
-55~150
83.3
UNITS V V A A W
mW/ oC oC
oC/W
November 16,2015-REV.01
Page 1
PPJQ2815
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-...
