PPJX8812
30V N-Channel Enhancement Mode MOSFET– ESD Protected
Voltage
30 V Current 350mA
SOT-563
Features
RDS(ON) ,
[email protected], ID@350mA<1.2Ω RDS(ON) ,
[email protected], ID@200mA<1.6Ω RDS(ON) ,
[email protected], ID@80mA<2.3Ω RDS(ON) ,
[email protected], ID@10mA<2.5Ω(typ.) Advanced Trench Process Technology ESD Protected 2KV HBM Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU
directive Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-563 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00009 ounces, 0.0026 grams Marking: X12
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 1)
Power Dissipation
TA=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 30 +10 350
1400 300 2.4 -55~150
417
UNITS V V mA mA
mW mW/ oC
oC
oC/W
September 30,2015-REV.00
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PPJX8812
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current
SYMBOL
BVDSS VGS(th)
RDS(on)
IDSS IGSS
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
IS
TEST CONDITION
VGS=0V, ID=250uA VDS=VGS, ID=250uA VGS=4.5V, ID=350mA VGS=2.5V, ID=200mA VGS=1.8V, ID=80mA VGS=1.5V, ID=10mA VDS=30V, VGS=0V VGS=+8V, VDS=0V VGS=+5V, VDS=0V
VDS=15V, ID=350mA, VGS=4.5V (Note 1,2)
VDS=15V, VGS=0V, f=1.0MHZ
VDD=15V, ID=80mA, VGS=4.0V, RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=350mA, VGS=0V
MIN. TYP. MAX. UNITS
30 -
-
0.6 0.85 1.1
- 0.94 1.2
- 1.32 1.6
- 1.82 2.3 - 2.5 - 0.01 1 - - +10 - - +1
V V
Ω
uA uA
- 0.87 - 0.26 - 0.16 - 34 - 8.9 - 2.5 - 7.1 - 20 - 41 - 31 -
nC pF ns
- - 350 mA - 0.88 1.3 V
NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper 4. The maximum current rating is package limited 5. Guaranteed by design, not subject to production testing.
September 30,2015-REV.00
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PPJX8812
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS. September 30,2015-REV.00
Fig.6 Body Diode Characteristics Page 3
PPJX8812
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
September 30,2015-REV.00
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PPJX8812
PART NO PACKING CODE VERSION
Part No Packing Code PJX8812_R1_00001 PJX8812_R2_00001 PJX8812_R1_00002 PJX8812_R2_00002
Package Type SOT-563 SOT-563 SOT-563 SOT-563
Packing type 4K pcs / 7” reel 10K pcs / 13” reel 8K pcs / 7” reel 20K pcs / 13” reel
Marking X12 X12 X12 X12
Version Halogen free Halogen free Halogen free Halogen free
MOUNTING PAD LAYOUT
September 30,2015-REV.00
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PPJX8812
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