PJZ18NA50

PPJZ18NA50 500V N-Channel MOSFET Voltage 500 V Current 18 A Features  RDS(ON), VGS@10V,ID@9A<0.35Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive. Mechanical Data  Case: TO-3PL Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-3PL Approx. Weight : 0.182 ounces, 5.174grams TO-3PL Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC VDS VGS ID IDM EAS PD Operating Junction and Storage Temperature Range TJ,TSTG Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA  Limited only By Maximum Junction Temperature TO-3PL 500 +30 18 72 1502 240 1.92 -55~150 0.52 50 UNITS V V A A mJ W W/ oC oC oC/W March 10,2014-REV.00 Page 1 PPJZ18NA50 Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS VGS(th) RDS(on) IDSS IGSS VSD VGS=0V,ID=250uA VDS=VGS,ID=2...