SSF3637S

SSF3637S 30V P-Channel MOSFET DESCRIPTION The SSF3637S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS =- 30V,ID =-10A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3637S SSF3637S SOP-8 Ø330mm SOP-8 Top View Tape Width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG Limit -30 ±20 -6.6 -5.2 -30 3.1 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 75 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Min Typ Max Unit -30 V www.goodark.com Page 1 of 4 Rev.1.1 SSF3637S 30V P-Channel MOSFET Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage ...