SSF4703DC

DESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. SSF4703DC 20V P-Channel MOSFET GENERAL FEATURES ● MOSFET VDS = -20V,ID = -3.4A RDS(ON) < 160mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ●SCHOTTKY VR = 20V, IF = 1A, VF<0.5V @ 0.5A ● High Power and current handing capability ● Lead free product ● Surface Mount Package APPLICATIONS ●DC-DC conversion applications ●Load switch ●Power management Schematic Diagram Pin Assignment DFN3X2-8L Bottom View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 4703DC SSF4703DC DFN3X2-8L － Tape Width － Quantity － ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol MOSFET Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM -3.4 -15 Schottky reverse voltage VR Continuous Forward Current IF Pulsed Forward Current IFM Maximum Power Dissipation PD 1.7 Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 Schottky 20 1.9 7 0.96 -55 To 150 Unit V V A A V A A W ℃ THERMAL CHARACTERISTICS MOSFET Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 75 ℃/W www.goodark.com Page 1 of 5 Rev.2.0 Schottky Thermal Resistance, Junction-to-Ambient (Note 2) SSF4703DC 20V...