60V N-Channel MOSFET
SSF6010A
60V N-Channel MOSFET
FEATURES Advanced trench process technology avalanche energy, 100% test Fully chara...
Description
SSF6010A
60V N-Channel MOSFET
FEATURES Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
ID =75A BV=60V R DS (ON)=8mΩ (typ.)
DESCRIPTION The SSF6010A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6010A is assembled in high reliability and qualified assembly house.
APPLICATIONS Power switching application
SSF6010A Top View (D2PAK)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ①
Power dissipation PD@TC=25ْC
Linear derating factor
VGS EAS EAR TJ TSTG
Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range
Max. 75 45 300 144 0.74 ±20 220 TBD
–55 to +175
Units
A
W W/ْ C
V mJ
ْC
Thermal Resistance Parameter
RθJC Junction-to-case RθJA Junction-to-ambient
Min. — —
Typ. 1.04 —
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source breakdown voltage 60 — — V
RDS(on) Static Drain-to-Source on-resistance — 8 10 mΩ
VGS(th) Gate threshold voltage
2.0 4.0 V
gfs Forward transconductance
— 58 — S
—— 2
IDSS Drain-to-Source leakage current
μA — — 10
Gate-to-Source forward leakage IGSS
G...
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