SSF6010

SSF6010 60V N-Channel MOSFET FEATURES  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =64A BV=60V RDS(ON)=11mΩ (typ.) DESCRIPTION The SSF6010 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6010 is assembled in high reliability and qualified assembly house. APPLICATIONS  Power switching application SSF6010 Top View (TO-220) Absolute Maximum Ratings Parameter ID@Tc=25ْ C Continuous drain current,VGS@10V ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ① Power dissipation PD@TC=25ْC Linear derating factor VGS EAS EAR TJ TSTG Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range Max. 64 45 300 144 0.74 ±20 220 TBD –55 to +175 Units A W W/ْ C V mJ ْC Thermal Resistance Parameter RθJC Junction-to-case RθJA Junction-to-ambient Min. — — Typ. 1.04 — Max. — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source breakdown voltage 60 — — V RDS(on) Static Drain-to-Source on-resistance — 11 13 mΩ VGS(th) Gate threshold voltage 2.0 4.0 V gfs Forward transconductance — 58 — S —— 2 IDSS Drain-to-Source leakage current μA — — 10 Gate-to-Source fo...