1SS351

Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5 V, 30 mA, 0.69 pF CP 1SS351 Features Series Connection of 2 Elements in a Small−Sized Package Facilitates High−Density Mounting and Permits 1SS351−Applied Equipment to be Made Smaller Small Interterminal Capacitance (C = 0.69 pF typ) Small Forward Voltage (VF = 0.23 V max) This is a Pb−Free Device ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Symbol Parameter Conditions Ratings Unit VRM Peak Reverse Voltage IF Forward Current Tj Junction Temperature 5 V 30 mA 125 °C Tstg Storage Temperature −55 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (Ta = 25°C) Ratings Symbol Parameter Conditions Min Typ Max Unit VF Forward Voltage IF = 1 mA − − 0.23 V IF Forward Current VF = 0.5 V 30 − − mA IR Reverse Current VR = 0.5 V − − 25 mA C Interterminal Capacitance VR = 0.2 V, f = 1 MHz − 0.69 0.9 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The specifications shown above are for each individuals diode. DATA SHEET www.onsemi.com SC−59 CASE 318BJ ELECTRICAL CO...