NSVMBD770DWT1G

MBD770DWT1G, NSVMBD770DWT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features Extremely Fast Switching Speed Low Forward Voltage AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Symbol Value Unit Forward Current IF 100 mA Non−Repetitive Peak Forward Surge Current (60 Hz Half Sine) IFSM 1 A Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C (Note 1) VR 70 V PF 380 mW 3 mW/°C Operating Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR4 @ 100 mm2, 1 oz Cu http://onsemi.com 70 VOLTS SCHOTTKY BARRIER DIODES Anode 1 N/C 2 Cathode 3 6 Cathode 5 N/C 4 Anode MARKING DIAGRAM 6 SOT−363 CASE 419B 1 STYLE 6 H5 MG G 1 M = Date Code G = Pb−Free Package (*No...