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MBRJ10L60CTG Dataheets PDF



Part Number MBRJ10L60CTG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power Rectifier
Datasheet MBRJ10L60CTG DatasheetMBRJ10L60CTG Datasheet (PDF)

MBRJ10L60CTG Product Preview SWITCHMODE Power Rectifier 60 V, 10 A Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capability • 10 A Total (5 A Per Diode Leg) • Guard−Ring for Stress Protection • This is a Pb−Free Device Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.9 Grams • Finish: All External Surfa.

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MBRJ10L60CTG Product Preview SWITCHMODE Power Rectifier 60 V, 10 A Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capability • 10 A Total (5 A Per Diode Leg) • Guard−Ring for Stress Protection • This is a Pb−Free Device Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.9 Grams • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS 1 2, 4 3 MARKING DIAGRAM 1 23 TO−220 FULLPAK] CASE 221AH CT SUFFIX AYWW B10L60G AKA A Y WW B10L60 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. P0 1 Publication Order Number: MBRJ10L60CT/D MBRJ10L60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 140°C (Per Leg) (Per Device) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) VRRM VRWM VR IF(AV) IFSM 60 5 10 200 V A A Operating Junction Temperature (Note 1) Storage Temperature ESD Ratings: Machine Model = C Human Body Model = 3B TJ −55 to +150 °C Tstg −65 to +175 °C > 400 > 8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Maximum Thermal Resistance Rating Junction−to−Case Junction−to−Ambient Symbol RRqqJJCA Value 4.3 105 Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25°C) (IF = 5 A, TC = 125°C) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Symbol vF iR DEVICE ORDERING INFORMATION Device Order Number MBRJ10L60CTG Package Type TO−220FP (Pb−Free) Typ Max Unit V 0.49 0.57 0.43 0.49 0.60 0.66 0.53 0.61 77 220 mA 33 60 mA Shipping 50 Units / Rail http://onsemi.com 2 IF, AVERAGE FORWARD CURRENT (A) IR, REVERSE CURRENT (A) MBRJ10L60CTG 100 100 IF, AVERAGE FORWARD CURRENT (A) 10 125°C 1 150°C 85°C 125°C 10 150°C 1 85°C TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage 1.0E+00 1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 0 150°C 125°C 85°C TJ = 25°C 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IR, REVERSE CURRENT (A) 1.0E+00 1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 60 0 150°C 125°C 85°C TJ = 25°C 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current 60 10 9 8 7 6 5 4 3 2 1 0 80 dc SQUARE WAVE RqJC = 5.7°C/W 90 100 110 120 130 140 150 TC, CASE TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg 160 IF, AVERAGE FORWARD CURRENT (A) 6 5 4 dc RqJA = 75°C/W 3 2 SQUARE WAVE 1 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 6. Current Derating, Ambient per Leg IF, AVERAGE FORWARD CURRENT (A) http://onsemi.com 3 PFO, AVERAGE POWER DISSIPATION (W) MBRJ10L60CTG 8 7 TJ = 150°C 6 5 SQUARE WAVE 4 dc 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 IO, AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation C, CAPACITANCE (pF) 10000 1000 100 10 0 TJ = 25°C 10 20 30 40 VR, REVERSE VOLTAGE (V) Figure 8. Capacitance 50 60 10 D = 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (sec) Figure 9. Typical Transient Thermal Response, Junction−to−Case 100 1000 R(t), TRANSIENT THERMAL RESISTANCE http://onsemi.com 4 MBRJ10L60CTG PACKAGE DIMENSIONS E/2 Q L 3X b2 e TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE C A E P 0.14 M B A .


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