Bipolar Transistor. 2SD1620 Datasheet

2SD1620 Datasheet PDF, Equivalent


Part Number

2SD1620

Description

Bipolar Transistor

Manufacture

ON Semiconductor

Total Page 6 Pages
PDF Download
Download 2SD1620 Datasheet PDF


2SD1620 Datasheet
Ordering number : EN1719D
2SD1620
Bipolar Transistor
10V, 3A, Low VCE(sat), NPN Single PCP
http://onsemi.com
Features
Less power dissipation because of low VCE(sat), permitting more ashes of light to be emitted
Large current capacity and highly resistant to breakdown
Excellent linearity of hFE in the region from low current to high current
Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEX
VCEO
VEBO
IC
ICP
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SD1620-TD-E
1.5
Conditions
Ratings
Unit
30 V
20 V
10 V
6V
3A
5A
Continued on next page.
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
0.4
2
0.5
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
TD
Electrical Connection
2
1
3
Semiconductor Components Industries, LLC, 2013
September, 2013
82212 TKIM/31010EA TKIM/31005TN(PC)/21599TH (KT)/N1596TS(KOTO)8-7707/5277KI/3045MW, TS No.1719-1/6

2SD1620 Datasheet
2SD1620
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Ratings
500
1.3
150
--55 to +150
Unit
mW
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEX
V(BR)CEO
V(BR)EBO
VCB=20V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=3A, IB=60mA
IC=10μA, IE=0A
IC=1mA, VBE=3V
IC=1mA, RBE=
IE=10μA, IC=0A
Ratings
min typ
140 210
200
30
0.3
30
20
10
6
max
100
100
0.4
Unit
nA
nA
MHz
pF
V
V
V
V
V
Ordering Information
Device
2SD1620-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
IC -- VCE
5
4 60mA40mA
25mA
3
15mA
10mA
2
5mA
1 2mA
0 IB=0mA
0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE -- V ITR09987
IC -- VCE
5
4 25mA
3
2
15mA
10mA
5mA
1 2mA
1mA
0 IB=0mA
0123456
Collector-to-Emitter Voltage, VCE -- V ITR09988
No.1719-2/6


Features Datasheet pdf Ordering number : EN1719D 2SD1620 Bipol ar Transistor 10V, 3A, Low VCE(sat), NP N Single PCP http://onsemi.com Featur es • Less power dissipation because o f low VCE(sat), permitting more flashe s of light to be emitted • Large curr ent capacity and highly resistant to br eakdown • Excellent linearity of hFE in the region from low current to high current • Ultrasmall size supports hi gh-density, ultrasmall-sized hybrid IC designs Specifications Absolute Maxi mum Ratings at Ta=25°C Parameter Sym bol Collector-to-Base Voltage Collecto r-to-Emitter Voltage Collector-to-Emitt er Voltage Emitter-to-Base Voltage Coll ector Current Collector Current (Pulse) VCBO VCEX VCEO VEBO IC ICP Package D imensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SD1620-TD-E 1.5 Condit ions Ratings Unit 30 V 20 V 10 V 6V 3 A 5A Continued on next page. Product & Package Information • Package : P CP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking .
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