C6117

www.DataSheet4U.com Ordering number : ENA0901 2SC6117 SANYO Semiconductors DATA SHEET 2SC6117 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Ratings 1500 800 6 8 20 3.0 65 150 --55 to +150 Unit V V V A A W W °C °C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol Conditions ICBO ICES VCEO(sus) IEBO VCB=800V, IE=0A VCE=1500V, RBE=0Ω IC=100mA, IB=0A VEB=4V, IC=0A min 800 40 Ratings typ max Unit 10 µA 1.0 mA V 130 mA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sus...