MMUN2218L

MMUN2218L Product Preview Digital Transistor (BRT) R1 = 1.0 kW, R2 = 10 kW NPN Transistors with Monolithic Bias Resistor Network This digital transistor is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 30 Vdc Input Reverse Voltage VIN(rev) 5 Vdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com PIN CONNECTIONS PIN 3 COLLECTOR PIN 1 BASE R1 (OUTPUT) (INPUT) R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAM XXX MG G 1 SOT−23 CASE 318 STYLE 6 XXX M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation m...