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MTB3N60E

ON Semiconductor

High Energy Power FET


Description
MTB3N60E Product Preview TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage,...



ON Semiconductor

MTB3N60E

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