Document
MUN5236DW1, NSBC115EDXV6
Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW
NPN Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5236DW1T1G
SOT−363
3,000/Tape & Reel
NSBC115EDXV6T1G
SOT−563
4,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com PIN CONNECTIONS
(3) (2) (1)
R1 Q1
R2 R1 (4) (5)
R2 Q2 (6)
MARKING DIAGRAMS
SOT−363 CASE 419B
6
7N M G G
1
SOT−563 CASE 463A
7N M G G
1
7N = Specific Device Code M = Date Code* G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 1
1
Publication Order Number: DTC115ED/D
MUN5236DW1, NSBC115EDXV6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5236DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
MUN5236DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
Thermal Resistance, Junction to Lead
(Note 1) (Note 2)
RqJL
Junction and Storage Temperature Range NSBC115EDXV6 (SOT−563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 1) (Note 1)
PD
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
NSBC115EDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 1) (Note 1)
PD
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels.
Max
187 256 1.5 2.0 670 490
250 385 2.0 3.0 493 325 188 208 −55 to +150
357 2.9 350
500 4.0 250 −55 to +150
Unit
mW mW/°C °C/W
mW mW/°C °C/W
°C/W
°C
mW mW/°C °C/W
mW mW/°C °C/W
°C
http://onsemi.com 2
MUN5236DW1, NSBC115EDXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
nAdc − 100
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
nAdc − 500
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
IEBO
−
mAdc − 0.05
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
50 50
− −
Vdc −
Vdc −
ON CHARACTERISTICS
DC Current Gain (Note 4) (IC = 5.0 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage (Note 4) (IC = 10 mA, IB = 0.3 mA)
hFE VCE(sat)
80 −
150 − − 0.25
V
Input Voltage (Off) (VCE = 5.0 V, IC = 100 mA)
Input Voltage (On) (VCE = 0.3 V, IC = 1.0 mA)
Vi(off)
−
Vdc 1.2 0.5
Vi(on)
Vdc
3.0 1.7
−
Output Voltage (On) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
Output Voltage (Off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
VOL −
Vdc − 0.2
VOH
4.9
−
Vdc −
R1 70 100 130 kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
PD, POWER DISSIPATION .