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NSBC115EDXV6 Dataheets PDF



Part Number NSBC115EDXV6
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual NPN Bias Resistor Transistors
Datasheet NSBC115EDXV6 DatasheetNSBC115EDXV6 Datasheet (PDF)

MUN5236DW1, NSBC115EDXV6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them in.

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MUN5236DW1, NSBC115EDXV6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping† MUN5236DW1T1G SOT−363 3,000/Tape & Reel NSBC115EDXV6T1G SOT−563 4,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com PIN CONNECTIONS (3) (2) (1) R1 Q1 R2 R1 (4) (5) R2 Q2 (6) MARKING DIAGRAMS SOT−363 CASE 419B 6 7N M G G 1 SOT−563 CASE 463A 7N M G G 1 7N = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. © Semiconductor Components Industries, LLC, 2014 January, 2014 − Rev. 1 1 Publication Order Number: DTC115ED/D MUN5236DW1, NSBC115EDXV6 THERMAL CHARACTERISTICS Characteristic Symbol MUN5236DW1 (SOT−363) ONE JUNCTION HEATED Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA MUN5236DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL Junction and Storage Temperature Range NSBC115EDXV6 (SOT−563) ONE JUNCTION HEATED TJ, Tstg Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 1) PD Thermal Resistance, Junction to Ambient (Note 1) RqJA NSBC115EDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 1) PD Thermal Resistance, Junction to Ambient (Note 1) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. Max 187 256 1.5 2.0 670 490 250 385 2.0 3.0 493 325 188 208 −55 to +150 357 2.9 350 500 4.0 250 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C/W °C mW mW/°C °C/W mW mW/°C °C/W °C http://onsemi.com 2 MUN5236DW1, NSBC115EDXV6 ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − nAdc − 100 Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − nAdc − 500 Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − mAdc − 0.05 Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO 50 50 − − Vdc − Vdc − ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 5.0 mA, VCE = 10 V) Collector-Emitter Saturation Voltage (Note 4) (IC = 10 mA, IB = 0.3 mA) hFE VCE(sat) 80 − 150 − − 0.25 V Input Voltage (Off) (VCE = 5.0 V, IC = 100 mA) Input Voltage (On) (VCE = 0.3 V, IC = 1.0 mA) Vi(off) − Vdc 1.2 0.5 Vi(on) Vdc 3.0 1.7 − Output Voltage (On) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) Output Voltage (Off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor VOL − Vdc − 0.2 VOH 4.9 − Vdc − R1 70 100 130 kW Resistor Ratio R1/R2 0.8 1.0 1.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%. PD, POWER DISSIPATION .


MUN5236DW1 NSBC115EDXV6 NCL30105


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